Electronic Materials, Adv.
| Numbering Code | G-ENG11 5C813 LJ72 | Year/Term | 2022 ・ Second semester | |
|---|---|---|---|---|
| Number of Credits | 2 | Course Type | Lecture | |
| Target Year | Target Student | |||
| Language | Japanese | Day/Period | Thu.2 | |
| Instructor name | KIMOTO TSUNENOBU (Graduate School of Engineering Professor) | |||
| Outline and Purpose of the Course | Fundamentals and recent progress in semiconductor materials and various advanced devices are explained. | |||
| Schedule and Contents |
Si semiconductor,3-4times,Bulk growth, wafering, defect engineering, and impurity gettering of Si are reviewed. Silicon-On-Insulator (SOI) is also explained. Advanced CMOS devices and materials,2-3times,Basic structures and performance enhancement of advanced CMOS devices, the core devices in LSI, are explained. High-frequency devices and materials,2-3times,Structure and operation principle of high-frequency devices are explained. Semiconductor materials suitable for high-frequency applications are discussed. Power devices and materials,2-3times,Structure and operation principle of power devices are explained. Semiconductor materials suitable for power conversion applications are discussed. |
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| Evaluation Methods and Policy | Report evaluation, taking account of lecture attendance | |||
| Course Requirements | Basics of solid state physics and semiconductor engineering | |||
| Textbooks | Textbooks/References | No textbook is assinged. | ||
| Related URL | ||||
