Semiconductor Engineering, Adv.
|Numbering Code||G-ENG11 5C810 LJ72||Year/Term||2021 ・ First semester|
|Number of Credits||2||Course Type||Lecture|
|Target Year||Target Student|
|Instructor name||KIMOTO TSUNENOBU (Graduate School of Engineering Professor)|
|Outline and Purpose of the Course||This course explores the fundamentals of semiconductor physics and engineering, which are esseantial to understand semiconductor materials and devices.|
|Schedule and Contents||
Band theory,2-3times,Electronic band structures are discussed. Nearly free electron and tight-binding approachs are explained. Band structures of major semiconductors such as Si and GaAs are also discussed.
Carrier transport and scattering,3-4times,Carrier transport and electrical conduction are explained by using the Boltzmann transport equation. Scattering mechanism of carriers and mobility are discussed.
High-field effect,2-3times,Drift of carriers and junction breakdown under high electric field are discussed. A few phenomena under high magnetic field are also explained.
Defects in semiconductors,1-2times,Crystallographic and electronic properties of defects (both extended and point defects) in a semiconductor are explained.
MOS physics,2-3times,Energy band diagrams and carrier statistics in a metal/insulator/semiconductor (MIS) structure are discussed.
|Evaluation Methods and Policy||Final examination and a few reports|
|Course Requirements||Semiconductor engineering, quantum mechanics (undergraduate level)|
|Textbooks||Textbooks/References||No textbook is assigned.|
|References, etc.||S. M. Sze Physics of Semiconductor Devices (Wiley Interscience) P.Y.Yu and M. Cardona Fundamentals of Semiconductors (Springer)|